?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com ksa3010 rev. c ksa3010 pnp epitaxia l silicon transistor january 2007 ksa3010 pnp epitaxial silicon transistor ? audio power amplifier ? high current capability : i c = - 6a ? high power dissipation ? wide s.o.a ? complement to ksc4010 absolute maximum ratings * t a =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 c. 2) these are steady state limits. the factory should be consulte d on applications involving pulsed or low duty cycle operations . thermal characteristics t a =25 c unless otherwise noted * device mounted on the minimum pad size. electrical char acteristics* t a = 25c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% h fe classification symbol parameter value units v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current (dc) -6 a i cp collector current (pulse) -12 a p c collector dissipation (t c =25 c) 60 w t j junction temperature 150 c t stg storage temperature - 50 ~ 150 c symbol parameter value units r jc thermal resistance, junction to case 2.0 c/w symbol parameter test conditions min. typ. max. units bv ceo collector-emitter breakdown voltage i c = -5a, i b = 0 -120 - - v i cbo collector cut-off current v cb = -120v, i e = 0 - - -10 a i ebo emitter cut-off current v eb = -5v, i c = 0 - - -10 a h fe dc current gain v ce = -5v, i c = -1a, 55 - 160 v ce (sat) collector-emitter saturation voltage i c = -5a, i b = -0.5a - - -2.5 v v be (on) base-emitter on voltage v ce = -5v, i c = -5a - - -1.5 v f t current gain bandwidth product v ce = -5v, i c = -1a - 30 - mhz c ob output capacitance v cb =-10v, i e =0, f=1mhz - 180 - pf classification r o h fe 55 ~ 110 80 ~ 160 to-3p 1 1.base 2.collector 3.emitter
2 www.fairchildsemi.com ksa3010 rev. c ksa3010 pnp epitaxia l silicon transistor package marking and ordering information note : the suffix ?-tu? means the tube packing method, which can be on fairchildsemi website at http ://www.fairchildsemi.com/packaging device item (note) device marking package packing method qty(pcs) KSA3010RTU a3010r to-3p tube 450 ksa3010otu a3010o to-3p tube 450
3 www.fairchildsemi.com ksa3010 rev. c ksa3010 pnp epitaxia l silicon transistor typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. safe operating area figure 6. power derating 012345678910 0 1 2 3 4 5 6 7 8 9 10 i b = - 20 0 m a i b = - 1 8 0 m a i b = - 1 6 0 m a i b = - 1 4 0 m a i b = - 1 2 0 m a i b = - 1 0 0 m a i b =-80ma i b =-60ma i b =-40ma i b =-20ma i c (a), collector crrent v ce (v), collector emitter voltage 0.1 1 10 10 1 10 2 10 3 t c =25 t c =100 v ce =5v h fe , dc current gain i c (a), collector current 0.01 0.1 1 10 0.01 0.1 1 10 t c =25 t c =100 i c =10i b v ce (sat), saturation voltage i c (a), collector current 0 1 2 3 4 5 6 7 8 9 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v be (v), base emitter voltage i c (a), collector current v ce =-5v t c =25 t c =100 0.1 1 10 100 -0.01 -0.1 -1 -10 -100 *single nonrepetitive pulse t c =25[ o c] 1 0 0 m s d c v ceo max i c max. (dc) 1 0 m s i c max. (pulse) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 p c (w), power dissipation t c ( ), case temperature
4 www.fairchildsemi.com ksa3010 rev. c ksa3010 pnp epitaxia l silicon transistor mechanical dimensions 15.60 0.20 4.80 0.2 0 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.2 0 3.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.1 5 ?.0 5 0.60 +0.1 5 ?.0 5 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3p dimensions in millimeters
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